APT40GR120S PDF and Equivalents Search

 

APT40GR120S Specs and Replacement

Type Designator: APT40GR120S

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 88 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 320 pF

Package: TO268AB

 APT40GR120S Substitution

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APT40GR120S datasheet

 ..1. Size:158K  microsemi
apt40gr120s.pdf pdf_icon

APT40GR120S

APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical . Ultra Fast NPT - IGBT (B) The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D3PA K Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed. (S) C G E Features G C Low Saturation Voltage Short Circuit... See More ⇒

 4.1. Size:158K  microsemi
apt40gr120b.pdf pdf_icon

APT40GR120S

APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical . Ultra Fast NPT - IGBT (B) The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D3PA K Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed. (S) C G E Features G C Low Saturation Voltage Short Circuit... See More ⇒

 8.1. Size:170K  apt
apt40gp90j.pdf pdf_icon

APT40GR120S

TYPICAL PERFORMANCE CURVES APT40GP90J APT40GP90J 900V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss SSOA Rat... See More ⇒

 8.2. Size:197K  apt
apt40gp60b2df2.pdf pdf_icon

APT40GR120S

TYPICAL PERFORMANCE CURVES APT40GP60B2DF2 APT40GP60B2DF2 600V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G switchmode power supplies. C E Low Conduction Loss 100 k... See More ⇒

Specs: APT15GT60KRG , APT25GP90BDQ1G , APT30GN60BDQ2G , APT30GP60BDQ1G , APT30GT60KRG , APT35GN120SG , APT35GP120B2DQ2G , APT40GR120B , MBQ50T65FDSC , APT44GA60BD30C , APT44GA60SD30C , APT50GF120B2RG , APT50GF120JRDQ3 , APT50GF120LRG , APT50GP60B2DQ2G , APT50GP60LDLG , APT50GT120B2RDLG .

History: SKM145GAL176D | APT15GT60KRG

Keywords - APT40GR120S transistor spec

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