ART45U120SPEC Todos los transistores

 

ART45U120SPEC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ART45U120SPEC
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 45 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 27 nS
   Coesⓘ - Capacitancia de salida, typ: 140 pF
   Paquete / Cubierta: TO247AC
 

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ART45U120SPEC Datasheet (PDF)

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 art45u120spec.pdf pdf_icon

ART45U120SPEC

ART45U120(1GBT1200) INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control Low conduction losses VCES=1200 V High switching speed VCE(on) typ. =3,1V Tighter parameter distribution @VGE =15V, Ic=45A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Units MaxCollector-to-Emitter Voltage VCES V 1200Continuous Collector Current

 9.1. Size:76K  st
 start450.pdf pdf_icon

ART45U120SPEC

START450NPN Silicon RF Transistor COMPRESSION POINT P1dB=19dBm @ 1.8GHz TRANSITION FREQUENCY 42GHz HIGH LINEARITY ULTRA MINIATURE SOT343(SC70) PACKAGESOT343 (SC70)ORDER CODE BRANDINGSTART450TR 450DESCRIPTIONThe START450 is a member of the START family thatAPPLICATIONSprovide the state of the art of RF silicon process to themarket. Manufacturated in the thi

Otros transistores... APT75GN60BDQ2G , APT75GN60LDQ3G , APT75GN60SDQ2G , APT75GT120JRDQ3 , ART10U120 , ART20U120 , ART30U120 , ART40U120 , JT075N065WED , AUIRGDC0250 , SKM100GAL12T4 , SKM100GB12T4 , SKM100GB12T4G , SKM100GB12V , SKM100GB176D , SKM145GAL176D , SKM145GB066D .

History: MMG15H120XB6TN | APTGT35A120D1 | IXSH10N120A

 

 
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