ART45U120SPEC IGBT. Datasheet pdf. Equivalent
Type Designator: ART45U120SPEC
Type: IGBT
Marking Code: 1GBT1200
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 45 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 27 nS
Coesⓘ - Output Capacitance, typ: 140 pF
Qgⓘ - Total Gate Charge, typ: 180 nC
Package: TO247AC
ART45U120SPEC Transistor Equivalent Substitute - IGBT Cross-Reference Search
ART45U120SPEC Datasheet (PDF)
art45u120spec.pdf
ART45U120(1GBT1200) INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control Low conduction losses VCES=1200 V High switching speed VCE(on) typ. =3,1V Tighter parameter distribution @VGE =15V, Ic=45A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Units MaxCollector-to-Emitter Voltage VCES V 1200Continuous Collector Current
start450.pdf
START450NPN Silicon RF Transistor COMPRESSION POINT P1dB=19dBm @ 1.8GHz TRANSITION FREQUENCY 42GHz HIGH LINEARITY ULTRA MINIATURE SOT343(SC70) PACKAGESOT343 (SC70)ORDER CODE BRANDINGSTART450TR 450DESCRIPTIONThe START450 is a member of the START family thatAPPLICATIONSprovide the state of the art of RF silicon process to themarket. Manufacturated in the thi
Datasheet: APT75GN60BDQ2G , APT75GN60LDQ3G , APT75GN60SDQ2G , APT75GT120JRDQ3 , ART10U120 , ART20U120 , ART30U120 , ART40U120 , JT075N065WED , AUIRGDC0250 , SKM100GAL12T4 , SKM100GB12T4 , SKM100GB12T4G , SKM100GB12V , SKM100GB176D , SKM145GAL176D , SKM145GB066D .
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