SSM20G45EGJ Todos los transistores

 

SSM20G45EGJ - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM20G45EGJ
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 20 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 450 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 6 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 130(PULSE) A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 72 nS
   Coesⓘ - Capacitancia de salida, typ: 145 pF
   Paquete / Cubierta: TO251
 

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SSM20G45EGJ Datasheet (PDF)

 ..1. Size:717K  silicon standard
ssm20g45egj.pdf pdf_icon

SSM20G45EGJ

SSM20G45EGH/JN-channel Insulated-Gate Bipolar TransistorPRODUCT SUMMARY DESCRIPTIONThe SSM20G45E acheives fast switching performanceV 450VCES with low gate charge without a complex drive circuit. It isVCE(sat) 5V typ.suitable for use in short-duration, high-current strobeapplications, such as still-camera flash. I 130ACP The SSM20G45EGH is in a TO-252 package, which is

 4.1. Size:717K  silicon standard
ssm20g45egh.pdf pdf_icon

SSM20G45EGJ

SSM20G45EGH/JN-channel Insulated-Gate Bipolar TransistorPRODUCT SUMMARY DESCRIPTIONThe SSM20G45E acheives fast switching performanceV 450VCES with low gate charge without a complex drive circuit. It isVCE(sat) 5V typ.suitable for use in short-duration, high-current strobeapplications, such as still-camera flash. I 130ACP The SSM20G45EGH is in a TO-252 package, which is

 9.1. Size:319K  silicon standard
ssm20p02gh ssm20p02gj.pdf pdf_icon

SSM20G45EGJ

SSM20P02H,JP-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple drive requirement D BVDSS -20V2.5V gate drive capability RDS(ON) 52m Fast switching ID -18AGSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device design, low on-resistance and cost-effectiveness.The TO-252 package is wi

 9.2. Size:321K  silicon standard
ssm20n03s.pdf pdf_icon

SSM20G45EGJ

SSM20N03S,PN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETDynamic dv/dt rating BVDSS 30VDRepetitive-avalanche rated RDS(ON) 52m Fast switching ID 20AGSimple drive requirementSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,S TO-263ruggedized device design, low on-resistance and cost-effectiveness.The TO-

Otros transistores... SML50HB06 , SPM1001 , SPM1002 , SPM1003 , SPM1004 , SPM1005 , SPM1006 , SSM20G45EGH , GT30F132 , SSM28G45EM , STGP35HF60W , T0160NB45A , T1500TB25E , SKM75GAR063D , SKM75GB12T4 , SKM75GB12V , SKM75GB176D .

History: APTGF90TA60P | IXGP20N60B

 

 
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