All IGBT. SSM20G45EGJ Datasheet

 

SSM20G45EGJ IGBT. Datasheet pdf. Equivalent


   Type Designator: SSM20G45EGJ
   Type: IGBT + Built-in Zener Diodes
   Marking Code: 20G45EGJ
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 20 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic|ⓘ - Maximum Collector Current: 130(PULSE) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.2 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 72 nS
   Coesⓘ - Output Capacitance, typ: 145 pF
   Qgⓘ - Total Gate Charge, typ: 51 nC
   Package: TO251

 SSM20G45EGJ Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SSM20G45EGJ Datasheet (PDF)

 ..1. Size:717K  silicon standard
 ssm20g45egj.pdf

SSM20G45EGJ SSM20G45EGJ

SSM20G45EGH/JN-channel Insulated-Gate Bipolar TransistorPRODUCT SUMMARY DESCRIPTIONThe SSM20G45E acheives fast switching performanceV 450VCES with low gate charge without a complex drive circuit. It isVCE(sat) 5V typ.suitable for use in short-duration, high-current strobeapplications, such as still-camera flash. I 130ACP The SSM20G45EGH is in a TO-252 package, which is

 4.1. Size:717K  silicon standard
 ssm20g45egh.pdf

SSM20G45EGJ SSM20G45EGJ

SSM20G45EGH/JN-channel Insulated-Gate Bipolar TransistorPRODUCT SUMMARY DESCRIPTIONThe SSM20G45E acheives fast switching performanceV 450VCES with low gate charge without a complex drive circuit. It isVCE(sat) 5V typ.suitable for use in short-duration, high-current strobeapplications, such as still-camera flash. I 130ACP The SSM20G45EGH is in a TO-252 package, which is

 9.1. Size:319K  silicon standard
 ssm20p02gh ssm20p02gj.pdf

SSM20G45EGJ SSM20G45EGJ

SSM20P02H,JP-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple drive requirement D BVDSS -20V2.5V gate drive capability RDS(ON) 52m Fast switching ID -18AGSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device design, low on-resistance and cost-effectiveness.The TO-252 package is wi

 9.2. Size:321K  silicon standard
 ssm20n03s.pdf

SSM20G45EGJ SSM20G45EGJ

SSM20N03S,PN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETDynamic dv/dt rating BVDSS 30VDRepetitive-avalanche rated RDS(ON) 52m Fast switching ID 20AGSimple drive requirementSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,S TO-263ruggedized device design, low on-resistance and cost-effectiveness.The TO-

 9.3. Size:555K  silicon standard
 ssm2030gm.pdf

SSM20G45EGJ SSM20G45EGJ

SSM2030GMN- and P-channel Enhancement-mode Power MOSFETsN-CH BVDSS 20VSimple drive requirement D2D2D2 RDS(ON) 30mLower gate charge D1D1D1D1ID 6AFast switching characteristicsG2G2P-CH BVDSS -20VPb-free; RoHS compliant. S2S2 G1SO-8 S1G1RDS(ON) 50mS1 DESCRIPTIONID -5AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer wit

 9.4. Size:466K  silicon standard
 ssm2030sd.pdf

SSM20G45EGJ SSM20G45EGJ

SSM2030SDN AND P-CHANNELENHANCEMENT-MODE POWER MOSFETSSimple drive requirement D2 N-ch BV 20VDSSD2D1Low on-resistance R 60mDS(ON)D1Fast switching I 2.6ADP-ch BVDSS -20VG2S2PDIP-8G1 RDS(ON) 80mS1Description ID -2.3APower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,VinVoutruggedized device design,

Datasheet: SML50HB06 , SPM1001 , SPM1002 , SPM1003 , SPM1004 , SPM1005 , SPM1006 , SSM20G45EGH , IKW40T120 , SSM28G45EM , STGP35HF60W , T0160NB45A , T1500TB25E , SKM75GAR063D , SKM75GB12T4 , SKM75GB12V , SKM75GB176D .

 

 
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