Справочник IGBT. SSM20G45EGJ

 

SSM20G45EGJ Даташит. Аналоги. Параметры и характеристики.


   Наименование: SSM20G45EGJ
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 20 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 450 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 6 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 130(PULSE) A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 5 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 72 nS
   Coesⓘ - Выходная емкость, типовая: 145 pF
   Тип корпуса: TO251
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SSM20G45EGJ Datasheet (PDF)

 ..1. Size:717K  silicon standard
ssm20g45egj.pdfpdf_icon

SSM20G45EGJ

SSM20G45EGH/JN-channel Insulated-Gate Bipolar TransistorPRODUCT SUMMARY DESCRIPTIONThe SSM20G45E acheives fast switching performanceV 450VCES with low gate charge without a complex drive circuit. It isVCE(sat) 5V typ.suitable for use in short-duration, high-current strobeapplications, such as still-camera flash. I 130ACP The SSM20G45EGH is in a TO-252 package, which is

 4.1. Size:717K  silicon standard
ssm20g45egh.pdfpdf_icon

SSM20G45EGJ

SSM20G45EGH/JN-channel Insulated-Gate Bipolar TransistorPRODUCT SUMMARY DESCRIPTIONThe SSM20G45E acheives fast switching performanceV 450VCES with low gate charge without a complex drive circuit. It isVCE(sat) 5V typ.suitable for use in short-duration, high-current strobeapplications, such as still-camera flash. I 130ACP The SSM20G45EGH is in a TO-252 package, which is

 9.1. Size:319K  silicon standard
ssm20p02gh ssm20p02gj.pdfpdf_icon

SSM20G45EGJ

SSM20P02H,JP-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple drive requirement D BVDSS -20V2.5V gate drive capability RDS(ON) 52m Fast switching ID -18AGSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device design, low on-resistance and cost-effectiveness.The TO-252 package is wi

 9.2. Size:321K  silicon standard
ssm20n03s.pdfpdf_icon

SSM20G45EGJ

SSM20N03S,PN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETDynamic dv/dt rating BVDSS 30VDRepetitive-avalanche rated RDS(ON) 52m Fast switching ID 20AGSimple drive requirementSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,S TO-263ruggedized device design, low on-resistance and cost-effectiveness.The TO-

Другие IGBT... SML50HB06 , SPM1001 , SPM1002 , SPM1003 , SPM1004 , SPM1005 , SPM1006 , SSM20G45EGH , FGH30S130P , SSM28G45EM , STGP35HF60W , T0160NB45A , T1500TB25E , SKM75GAR063D , SKM75GB12T4 , SKM75GB12V , SKM75GB176D .

History: IXGA50N60B4 | SM2G100US60 | FGPF4565 | APT33GF120B2RD | IRG4BC10K | BM63364S-VA | 4MBI400VG-060R-50

 

 
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