VS-100MT060WDF Todos los transistores

 

VS-100MT060WDF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VS-100MT060WDF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 462 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 121 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.98 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 47 nS
   Coesⓘ - Capacitancia de salida, typ: 780 pF
   Paquete / Cubierta: MODULE
 

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VS-100MT060WDF Datasheet (PDF)

 ..1. Size:186K  vishay
 vs-100mt060wdf.pdf pdf_icon

VS-100MT060WDF

VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization: for definitions of compliance MTPple

 2.1. Size:238K  vishay
 vs-100mt060wsp.pdf pdf_icon

VS-100MT060WDF

VS-100MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 (Package example) Designed and qu

Otros transistores... T1500TB25E , SKM75GAR063D , SKM75GB12T4 , SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D , SKM900GA12E4 , HGTG30N60A4 , VS-100MT060WSP , VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF .

History: FGAF40N60SMD | FGHL40S65UQ | IXGA30N60C3 | 2MBI600NT-060 | SGW13N60UFD | VS-GT50TP60N | BLG20T65FULA-P

 

 
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