VS-100MT060WDF Todos los transistores

 

VS-100MT060WDF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VS-100MT060WDF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 462 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 121 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.98 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 47 nS
   Coesⓘ - Capacitancia de salida, typ: 780 pF
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

VS-100MT060WDF Datasheet (PDF)

 ..1. Size:186K  vishay
 vs-100mt060wdf.pdf pdf_icon

VS-100MT060WDF

VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization: for definitions of compliance MTPple

 2.1. Size:238K  vishay
 vs-100mt060wsp.pdf pdf_icon

VS-100MT060WDF

VS-100MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 (Package example) Designed and qu

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History: CM600DY-34H | MITB10WB1200TMH | RCM10N40 | HGT1S7N60B3D | JT075N120F2MA1E | 6MBI100VA-120-50 | DIM800XSM45-TS

 

 
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