VS-100MT060WDF Specs and Replacement
Type Designator: VS-100MT060WDF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 462 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 121 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.98 V @25℃
tr ⓘ - Rise Time, typ: 47 nS
Coesⓘ - Output Capacitance, typ: 780 pF
Package: MODULE VS-100MT060WDF Substitution - IGBT ⓘ Cross-Reference Search
VS-100MT060WDF datasheet
vs-100mt060wdf.pdf
VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization for definitions of compliance MTP ple... See More ⇒
vs-100mt060wsp.pdf
VS-100MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplate MTP UL approved file E78996 (Package example) Designed and qu... See More ⇒
Specs: T1500TB25E , SKM75GAR063D , SKM75GB12T4 , SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D , SKM900GA12E4 , FGW75N60HD , VS-100MT060WSP , VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF .
Keywords - VS-100MT060WDF transistor spec
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