All IGBT. VS-100MT060WDF Datasheet

 

VS-100MT060WDF Datasheet and Replacement


   Type Designator: VS-100MT060WDF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 462 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 121 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.98 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 47 nS
   Coesⓘ - Output Capacitance, typ: 780 pF
   Package: MODULE
      - IGBT Cross-Reference

 

VS-100MT060WDF Datasheet (PDF)

 ..1. Size:186K  vishay
vs-100mt060wdf.pdf pdf_icon

VS-100MT060WDF

VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization: for definitions of compliance MTPple

 2.1. Size:238K  vishay
vs-100mt060wsp.pdf pdf_icon

VS-100MT060WDF

VS-100MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 (Package example) Designed and qu

Datasheet: T1500TB25E , SKM75GAR063D , SKM75GB12T4 , SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D , SKM900GA12E4 , YGW60N65F1A2 , VS-100MT060WSP , VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF .

History: MDI150-12A4 | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | VS-GT100TP60N | SKM75GB176D | 7MBR25SA120-01

Keywords - VS-100MT060WDF transistor datasheet

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