VS-100MT060WSP Todos los transistores

 

VS-100MT060WSP IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VS-100MT060WSP

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 403 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 107 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.14 V @25℃

trⓘ - Tiempo de subida, typ: 52 nS

Coesⓘ - Capacitancia de salida, typ: 780 pF

Encapsulados: MODULE

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VS-100MT060WSP datasheet

 ..1. Size:238K  vishay
 vs-100mt060wsp.pdf pdf_icon

VS-100MT060WSP

VS-100MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplate MTP UL approved file E78996 (Package example) Designed and qu

 2.1. Size:186K  vishay
 vs-100mt060wdf.pdf pdf_icon

VS-100MT060WSP

VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization for definitions of compliance MTP ple

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History: YGW75N65F1 | TT030K065EQ | STGB19NC60H | VS-ETL015Y120H | SIG30N60W | TGH40N60F2D | SIGC03T60E

 

 

 

 

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