All IGBT. VS-100MT060WSP Datasheet

 

VS-100MT060WSP Datasheet and Replacement


   Type Designator: VS-100MT060WSP
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 403 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 107 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.14 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 52 nS
   Coesⓘ - Output Capacitance, typ: 780 pF
   Package: MODULE
      - IGBT Cross-Reference

 

VS-100MT060WSP Datasheet (PDF)

 ..1. Size:238K  vishay
 vs-100mt060wsp.pdf pdf_icon

VS-100MT060WSP

VS-100MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 (Package example) Designed and qu

 2.1. Size:186K  vishay
 vs-100mt060wdf.pdf pdf_icon

VS-100MT060WSP

VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization: for definitions of compliance MTPple

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXGK64N60B3D1 | HGTP10N120BN | MMG75SR120UZA | F3L75R07W2E3_B11 | STGB10M65DF2 | CT20ASL-8 | IGB30N60T

Keywords - VS-100MT060WSP transistor datasheet

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