VS-100MT060WSP Datasheet and Replacement
Type Designator: VS-100MT060WSP
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 403 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 107 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.14 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 52 nS
Coesⓘ - Output Capacitance, typ: 780 pF
Qg ⓘ - Total Gate Charge, typ: 480 nC
Package: MODULE
VS-100MT060WSP substitution
VS-100MT060WSP Datasheet (PDF)
vs-100mt060wsp.pdf

VS-100MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 (Package example) Designed and qu
vs-100mt060wdf.pdf

VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization: for definitions of compliance MTPple
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: NGTB30N120L | MG50J1BS11 | APTGS75X170E3 | IRGP4062D-EPBF | F3L150R12W2H3-B11
Keywords - VS-100MT060WSP transistor datasheet
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History: NGTB30N120L | MG50J1BS11 | APTGS75X170E3 | IRGP4062D-EPBF | F3L150R12W2H3-B11



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