VS-20MT120UFAPBF Todos los transistores

 

VS-20MT120UFAPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VS-20MT120UFAPBF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 240 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.29 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Coesⓘ - Capacitancia de salida, typ: 344 pF
   Paquete / Cubierta: MODULE
 

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VS-20MT120UFAPBF Datasheet (PDF)

 0.1. Size:220K  vishay
 vs-20mt120ufapbf.pdf pdf_icon

VS-20MT120UFAPBF

VS-20MT120UFAPbFwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Ultrafast NPT IGBT), 20 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Al2O3 DBC substrate Very low

 2.1. Size:263K  vishay
 vs-20mt120ufp.pdf pdf_icon

VS-20MT120UFAPBF

VS-20MT120UFPwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Ultrafast NPT IGBT), 40 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Aluminum nitride DBC Very low s

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXGA20N250 | 1MBC05D-060 | SKM75GB124D | SRE30N065FSSDF | BSM35GP120 | AUIRGP66524D0 | IXGF20N300

 

 
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