VS-20MT120UFAPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-20MT120UFAPBF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 240 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.29 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
Coesⓘ - Capacitancia de salida, typ: 344 pF
Paquete / Cubierta: MODULE
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VS-20MT120UFAPBF Datasheet (PDF)
vs-20mt120ufapbf.pdf
VS-20MT120UFAPbFwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Ultrafast NPT IGBT), 20 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Al2O3 DBC substrate Very low
vs-20mt120ufp.pdf
VS-20MT120UFPwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Ultrafast NPT IGBT), 40 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Aluminum nitride DBC Very low s
Otros transistores... SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D , SKM900GA12E4 , VS-100MT060WDF , VS-100MT060WSP , VS-150MT060WDF , IRG4PC40W , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S .
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