VS-20MT120UFAPBF Specs and Replacement
Type Designator: VS-20MT120UFAPBF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 240 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.29 V @25℃
Coesⓘ - Output Capacitance, typ: 344 pF
Package: MODULE VS-20MT120UFAPBF Substitution - IGBT ⓘ Cross-Reference Search
VS-20MT120UFAPBF datasheet
vs-20mt120ufapbf.pdf
VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors Full Bridge IGBT MTP (Ultrafast NPT IGBT), 20 A FEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Al2O3 DBC substrate Very low... See More ⇒
vs-20mt120ufp.pdf
VS-20MT120UFP www.vishay.com Vishay Semiconductors Full Bridge IGBT MTP (Ultrafast NPT IGBT), 40 A FEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Aluminum nitride DBC Very low s... See More ⇒
Specs: SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D , SKM900GA12E4 , VS-100MT060WDF , VS-100MT060WSP , VS-150MT060WDF , IRG7S313U , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S .
Keywords - VS-20MT120UFAPBF transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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