VS-20MT120UFAPBF Datasheet and Replacement
Type Designator: VS-20MT120UFAPBF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 240 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.29 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
Coesⓘ - Output Capacitance, typ: 344 pF
Package: MODULE
- IGBT Cross-Reference
VS-20MT120UFAPBF Datasheet (PDF)
vs-20mt120ufapbf.pdf

VS-20MT120UFAPbFwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Ultrafast NPT IGBT), 20 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Al2O3 DBC substrate Very low
vs-20mt120ufp.pdf

VS-20MT120UFPwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Ultrafast NPT IGBT), 40 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Aluminum nitride DBC Very low s
Datasheet: SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D , SKM900GA12E4 , VS-100MT060WDF , VS-100MT060WSP , VS-150MT060WDF , FGPF4533 , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S .
History: BSM35GP120G | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | GT60M101 | GT60M324 | CRG05T60A44S-G
Keywords - VS-20MT120UFAPBF transistor datasheet
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History: BSM35GP120G | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | GT60M101 | GT60M324 | CRG05T60A44S-G



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