VS-40MT120UHTAPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-40MT120UHTAPBF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 463 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.36 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
Coesⓘ - Capacitancia de salida, typ: 380 pF
Paquete / Cubierta: MODULE
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VS-40MT120UHTAPBF Datasheet (PDF)
vs-40mt120uhtapbf.pdf
VS-40MT120UHAPbF, VS-40MT120UHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Ultrafast NPT IGBT), 80 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficientAvailable 10 s short circuit capabilityAvailable Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery and low VF
vs-40mt120uhapbf.pdf
VS-40MT120UHAPbF, VS-40MT120UHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Ultrafast NPT IGBT), 80 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficientAvailable 10 s short circuit capabilityAvailable Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery and low VF
Otros transistores... SKM900GA12E4 , VS-100MT060WDF , VS-100MT060WSP , VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , KGF75N65KDF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S , ISL9V3040S3S , GT50N322A , DM2G150SH6N , DM2G150SH6NE .
History: BRG60N65D | CM1200HA-66H | AFGY120T65SPD-B4 | SG12N06DT | IXGK60N60 | FGPF15N60UNDF | IRG4BC20U
History: BRG60N65D | CM1200HA-66H | AFGY120T65SPD-B4 | SG12N06DT | IXGK60N60 | FGPF15N60UNDF | IRG4BC20U
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