VS-40MT120UHTAPBF Specs and Replacement
Type Designator: VS-40MT120UHTAPBF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 463 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.36 V @25℃
Coesⓘ - Output Capacitance, typ: 380 pF
Package: MODULE VS-40MT120UHTAPBF Substitution - IGBT ⓘ Cross-Reference Search
VS-40MT120UHTAPBF datasheet
vs-40mt120uhtapbf.pdf
VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A FEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient Available 10 s short circuit capability Available Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery and low VF ... See More ⇒
vs-40mt120uhapbf.pdf
VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A FEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient Available 10 s short circuit capability Available Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery and low VF ... See More ⇒
Specs: SKM900GA12E4 , VS-100MT060WDF , VS-100MT060WSP , VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , CRG40T65AK5HD , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S , ISL9V3040S3S , GT50N322A , DM2G150SH6N , DM2G150SH6NE .
History: TGL60N100ND1 | TP020N120CA | RJH60M6DPQ-A0 | SRE60N065FSU | TSG40N120CE | SPT25N120F1A1T8TL | RJH60D6DPK
Keywords - VS-40MT120UHTAPBF transistor spec
VS-40MT120UHTAPBF cross reference
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History: TGL60N100ND1 | TP020N120CA | RJH60M6DPQ-A0 | SRE60N065FSU | TSG40N120CE | SPT25N120F1A1T8TL | RJH60D6DPK
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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