All IGBT. VS-40MT120UHTAPBF Datasheet

 

VS-40MT120UHTAPBF Datasheet and Replacement


   Type Designator: VS-40MT120UHTAPBF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 463 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.36 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 380 pF
   Package: MODULE
      - IGBT Cross-Reference

 

VS-40MT120UHTAPBF Datasheet (PDF)

 0.1. Size:287K  vishay
 vs-40mt120uhtapbf.pdf pdf_icon

VS-40MT120UHTAPBF

VS-40MT120UHAPbF, VS-40MT120UHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Ultrafast NPT IGBT), 80 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficientAvailable 10 s short circuit capabilityAvailable Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery and low VF

 2.1. Size:287K  vishay
 vs-40mt120uhapbf.pdf pdf_icon

VS-40MT120UHTAPBF

VS-40MT120UHAPbF, VS-40MT120UHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Ultrafast NPT IGBT), 80 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficientAvailable 10 s short circuit capabilityAvailable Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery and low VF

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL

Keywords - VS-40MT120UHTAPBF transistor datasheet

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 VS-40MT120UHTAPBF equivalent finder
 VS-40MT120UHTAPBF lookup
 VS-40MT120UHTAPBF substitution
 VS-40MT120UHTAPBF replacement

 

 
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