VS-40MT120UHTAPBF Datasheet and Replacement
Type Designator: VS-40MT120UHTAPBF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 463 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.36 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Coesⓘ - Output Capacitance, typ: 380 pF
Qg ⓘ - Total Gate Charge, typ: 399 nC
Package: MODULE
VS-40MT120UHTAPBF substitution
VS-40MT120UHTAPBF Datasheet (PDF)
vs-40mt120uhtapbf.pdf

VS-40MT120UHAPbF, VS-40MT120UHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Ultrafast NPT IGBT), 80 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficientAvailable 10 s short circuit capabilityAvailable Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery and low VF
vs-40mt120uhapbf.pdf

VS-40MT120UHAPbF, VS-40MT120UHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Ultrafast NPT IGBT), 80 AFEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficientAvailable 10 s short circuit capabilityAvailable Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery and low VF
Datasheet: SKM900GA12E4 , VS-100MT060WDF , VS-100MT060WSP , VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , KGF75N65KDF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S , ISL9V3040S3S , GT50N322A , DM2G150SH6N , DM2G150SH6NE .
History: FGH50T65UPD | LEGM200BA120L2H | 1MBI300F-060 | 2MBI100NB-120 | SG12N06DT
Keywords - VS-40MT120UHTAPBF transistor datasheet
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History: FGH50T65UPD | LEGM200BA120L2H | 1MBI300F-060 | 2MBI100NB-120 | SG12N06DT



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