VS-70MT060WSP Todos los transistores

 

VS-70MT060WSP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VS-70MT060WSP
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 378 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 96 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.93 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 35 nS
   Coesⓘ - Capacitancia de salida, typ: 530 pF
   Paquete / Cubierta: MODULE
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VS-70MT060WSP Datasheet (PDF)

 ..1. Size:198K  vishay
 vs-70mt060wsp.pdf pdf_icon

VS-70MT060WSP

VS-70MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power Module Primary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 Designed and qualified for industria

 3.1. Size:178K  vishay
 vs-70mt060whtapbf.pdf pdf_icon

VS-70MT060WSP

VS-70MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation UL approved file E789

Otros transistores... VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , RJP63K2DPP-M0 , ISL9V3040D3S , ISL9V3040S3S , GT50N322A , DM2G150SH6N , DM2G150SH6NE , DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A .

History: APTLGF210U120T | APTGF25X120E2 | MMG150S120B6TN | BLG40T120FUH-F | GT80J101 | SGT20T60SD1T

 

 
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