VS-70MT060WSP IGBT. Datasheet pdf. Equivalent
Type Designator: VS-70MT060WSP
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 378 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 96 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.93 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 530 pF
Package: MODULE
VS-70MT060WSP Transistor Equivalent Substitute - IGBT Cross-Reference Search
VS-70MT060WSP Datasheet (PDF)
vs-70mt060wsp.pdf
VS-70MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power Module Primary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 Designed and qualified for industria
vs-70mt060whtapbf.pdf
VS-70MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation UL approved file E789
Datasheet: VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , RJP63K2DPP-M0 , ISL9V3040D3S , ISL9V3040S3S , GT50N322A , DM2G150SH6N , DM2G150SH6NE , DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A .
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