All IGBT. VS-70MT060WSP Datasheet

 

VS-70MT060WSP Datasheet and Replacement


   Type Designator: VS-70MT060WSP
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 378 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 96 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.93 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 35 nS
   Coesⓘ - Output Capacitance, typ: 530 pF
   Package: MODULE
      - IGBT Cross-Reference

 

VS-70MT060WSP Datasheet (PDF)

 ..1. Size:198K  vishay
 vs-70mt060wsp.pdf pdf_icon

VS-70MT060WSP

VS-70MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power Module Primary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 Designed and qualified for industria

 3.1. Size:178K  vishay
 vs-70mt060whtapbf.pdf pdf_icon

VS-70MT060WSP

VS-70MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation UL approved file E789

Datasheet: VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , RJP63K2DPP-M0 , ISL9V3040D3S , ISL9V3040S3S , GT50N322A , DM2G150SH6N , DM2G150SH6NE , DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A .

History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50

Keywords - VS-70MT060WSP transistor datasheet

 VS-70MT060WSP cross reference
 VS-70MT060WSP equivalent finder
 VS-70MT060WSP lookup
 VS-70MT060WSP substitution
 VS-70MT060WSP replacement

 

 
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