VS-70MT060WSP Specs and Replacement
Type Designator: VS-70MT060WSP
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 378 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 96 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.93 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6 V
tr ⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 530 pF
Qg ⓘ - Total Gate Charge, typ: 320 nC
Package: MODULE VS-70MT060WSP Substitution - IGBT ⓘ Cross-Reference Search
VS-70MT060WSP datasheet
vs-70mt060wsp.pdf
VS-70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplate MTP UL approved file E78996 Designed and qualified for industria... See More ⇒
vs-70mt060whtapbf.pdf
VS-70MT060WHTAPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT MTP (Warp 2 Speed IGBT), 70 A FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation UL approved file E789... See More ⇒
Specs: VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , RJP63K2DPP-M0 , ISL9V3040D3S , ISL9V3040S3S , GT50N322A , DM2G150SH6N , DM2G150SH6NE , DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A .
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