DM2G400SH6N Todos los transistores

 

DM2G400SH6N IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DM2G400SH6N

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1130 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 220 nS

Encapsulados: MODULE

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DM2G400SH6N datasheet

 ..1. Size:292K  dawin
 dm2g400sh6n.pdf pdf_icon

DM2G400SH6N

DM2G400SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses ar

 4.1. Size:708K  dawin
 dm2g400sh6a.pdf pdf_icon

DM2G400SH6N

DM2G400SH6A Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching los

Otros transistores... DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A , DM2G200SH6N , DM2G300SH12A , DM2G300SH6A , DM2G300SH6NE , DM2G400SH6A , CRG40T60AN3H , HYG15P120A1K1 , HYG15P120A1K2 , HYG15P120B1K1 , HYG15P120H1K1 , HYG30P120H1K1 , HYG40P120H1S , HYG75B120C1S , HYG75P120D1S .

 

 

 


 
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