DM2G400SH6N Todos los transistores

 

DM2G400SH6N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DM2G400SH6N
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1130 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 220 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

DM2G400SH6N Datasheet (PDF)

 ..1. Size:292K  dawin
 dm2g400sh6n.pdf pdf_icon

DM2G400SH6N

DM2G400SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses ar

 4.1. Size:708K  dawin
 dm2g400sh6a.pdf pdf_icon

DM2G400SH6N

DM2G400SH6AAug. 2009High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching los

Otros transistores... DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A , DM2G200SH6N , DM2G300SH12A , DM2G300SH6A , DM2G300SH6NE , DM2G400SH6A , CRG40T60AN3H , HYG15P120A1K1 , HYG15P120A1K2 , HYG15P120B1K1 , HYG15P120H1K1 , HYG30P120H1K1 , HYG40P120H1S , HYG75B120C1S , HYG75P120D1S .

History: APTLGF210U120T | APTGF25X120E2 | BLG40T120FUH-F | GT80J101 | MMG150S120B6TN | BLG15T65FUA-B

 

 
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