DM2G400SH6N Datasheet and Replacement
Type Designator: DM2G400SH6N
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1130 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 220 nS
Package: MODULE
- IGBT Cross-Reference
DM2G400SH6N Datasheet (PDF)
dm2g400sh6n.pdf

DM2G400SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses ar
dm2g400sh6a.pdf

DM2G400SH6AAug. 2009High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching los
Datasheet: DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A , DM2G200SH6N , DM2G300SH12A , DM2G300SH6A , DM2G300SH6NE , DM2G400SH6A , CRG40T60AN3H , HYG15P120A1K1 , HYG15P120A1K2 , HYG15P120B1K1 , HYG15P120H1K1 , HYG30P120H1K1 , HYG40P120H1S , HYG75B120C1S , HYG75P120D1S .
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
Keywords - DM2G400SH6N transistor datasheet
DM2G400SH6N cross reference
DM2G400SH6N equivalent finder
DM2G400SH6N lookup
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DM2G400SH6N replacement
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50



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