All IGBT. DM2G400SH6N Datasheet

 

DM2G400SH6N Datasheet and Replacement


   Type Designator: DM2G400SH6N
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1130 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 220 nS
   Package: MODULE
      - IGBT Cross-Reference

 

DM2G400SH6N Datasheet (PDF)

 ..1. Size:292K  dawin
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DM2G400SH6N

DM2G400SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses ar

 4.1. Size:708K  dawin
dm2g400sh6a.pdf pdf_icon

DM2G400SH6N

DM2G400SH6AAug. 2009High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching los

Datasheet: DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A , DM2G200SH6N , DM2G300SH12A , DM2G300SH6A , DM2G300SH6NE , DM2G400SH6A , CRG40T60AN3H , HYG15P120A1K1 , HYG15P120A1K2 , HYG15P120B1K1 , HYG15P120H1K1 , HYG30P120H1K1 , HYG40P120H1S , HYG75B120C1S , HYG75P120D1S .

History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50

Keywords - DM2G400SH6N transistor datasheet

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