IXA70I1200NA Todos los transistores

 

IXA70I1200NA IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXA70I1200NA

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 350 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 40 nS

Encapsulados: SOT227

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IXA70I1200NA datasheet

 ..1. Size:134K  ixys
 ixa70i1200na.pdf pdf_icon

IXA70I1200NA

IXA70I1200NA VCES = 1200V XPT IGBT I= 100A C25 VCE(sat) = 1.8V Single IGBT Part number IXA70I1200NA Backside isolated (C) 3 (G) 2 (E) 1+4 Features / Advantages Applications Package SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage V 3000 coefficient of the on-state voltage Solar inverter Industry sta

 9.1. Size:150K  ixys
 ixa70r1200na.pdf pdf_icon

IXA70I1200NA

IXA70R1200NA VCES = 1200V XPT IGBT I= 100A C25 VCE(sat) = 1.8V Boost Chopper Part number IXA70R1200NA Backside isolated 4 3 2 1 Features / Advantages Applications Package SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage V 3000 coefficient of the on-state voltage Solar inverter Industry standard out

Otros transistores... IFS75B12N3E4_B32 , IXYH20N120C3D1 , IXYH20N120C3 , IXYH30N120C3 , IXYH30N120C3D1 , IXA4I1200UC , IXA4IF1200TC , IXA4IF1200UC , RJH3047 , IXYP20N120C3 , IXYP30N120C3 , IXYR100N120C3 , IXYH40N120B3 , IXYH40N120B3D1 , IXYH40N120C3 , IXYH40N120C3D1 , IXYH50N120C3D1 .

History: SGP07N120

 

 

 


 
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