IXA70I1200NA IGBT. Datasheet pdf. Equivalent
Type Designator: IXA70I1200NA
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 40 nS
Qgⓘ - Total Gate Charge, typ: 190 nC
Package: SOT227
IXA70I1200NA Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXA70I1200NA Datasheet (PDF)
ixa70i1200na.pdf
IXA70I1200NAVCES = 1200VXPT IGBTI= 100AC25VCE(sat) = 1.8VSingle IGBTPart numberIXA70I1200NABackside: isolated(C) 3(G) 2(E) 1+4Features / Advantages: Applications: Package: SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~3000 coefficient of the on-state voltage Solar inverter Industry sta
ixa70r1200na.pdf
IXA70R1200NAVCES = 1200VXPT IGBTI= 100AC25VCE(sat) = 1.8VBoost ChopperPart numberIXA70R1200NABackside: isolated4321Features / Advantages: Applications: Package: SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~3000 coefficient of the on-state voltage Solar inverter Industry standard out
Datasheet: IFS75B12N3E4_B32 , IXYH20N120C3D1 , IXYH20N120C3 , IXYH30N120C3 , IXYH30N120C3D1 , IXA4I1200UC , IXA4IF1200TC , IXA4IF1200UC , CRG40T60AK3HD , IXYP20N120C3 , IXYP30N120C3 , IXYR100N120C3 , IXYH40N120B3 , IXYH40N120B3D1 , IXYH40N120C3 , IXYH40N120C3D1 , IXYH50N120C3D1 .
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