IXA70I1200NA Specs and Replacement
Type Designator: IXA70I1200NA
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Package: SOT227
IXA70I1200NA Substitution - IGBT ⓘ Cross-Reference Search
IXA70I1200NA datasheet
ixa70i1200na.pdf
IXA70I1200NA VCES = 1200V XPT IGBT I= 100A C25 VCE(sat) = 1.8V Single IGBT Part number IXA70I1200NA Backside isolated (C) 3 (G) 2 (E) 1+4 Features / Advantages Applications Package SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage V 3000 coefficient of the on-state voltage Solar inverter Industry sta... See More ⇒
ixa70r1200na.pdf
IXA70R1200NA VCES = 1200V XPT IGBT I= 100A C25 VCE(sat) = 1.8V Boost Chopper Part number IXA70R1200NA Backside isolated 4 3 2 1 Features / Advantages Applications Package SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage V 3000 coefficient of the on-state voltage Solar inverter Industry standard out... See More ⇒
Specs: IFS75B12N3E4_B32 , IXYH20N120C3D1 , IXYH20N120C3 , IXYH30N120C3 , IXYH30N120C3D1 , IXA4I1200UC , IXA4IF1200TC , IXA4IF1200UC , RJH3047 , IXYP20N120C3 , IXYP30N120C3 , IXYR100N120C3 , IXYH40N120B3 , IXYH40N120B3D1 , IXYH40N120C3 , IXYH40N120C3D1 , IXYH50N120C3D1 .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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