CY25AAJ-8F Todos los transistores

 

CY25AAJ-8F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CY25AAJ-8F
   Tipo de transistor: IGBT + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 0.5 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 400 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 6 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150(PULSE) A
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 1.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Paquete / Cubierta: SOP-8
 

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CY25AAJ-8F Datasheet (PDF)

 ..1. Size:112K  renesas
 cy25aaj-8f.pdf pdf_icon

CY25AAJ-8F

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:38K  mitsubishi
 cy25aaj-8.pdf pdf_icon

CY25AAJ-8F

MITSUBISHI IGBTMITSUBISHI IGBTCY25AAJ-8CY25AAJ-8Nch IGBT for STROBE FLASHERNch IGBT for STROBE FLASHERCY25AAJ-8 OUTLINE DRAWING Dimensions in mm 1.8 MAX.5.00.41.27 EMITTER GATE COLLECTOR VCES ............................................................................... 400V ICM ...............

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IRG4BC40W | SIGC05T60SNC | TGHP75N120FDR | IXGT35N120C

 

 
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