CY25AAJ-8F IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CY25AAJ-8F
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 0.5 W
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 6 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150(PULSE) A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
Encapsulados: SOP-8
Búsqueda de reemplazo de CY25AAJ-8F IGBT
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CY25AAJ-8F datasheet
cy25aaj-8f.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
cy25aaj-8.pdf
MITSUBISHI IGBT MITSUBISHI IGBT CY25AAJ-8 CY25AAJ-8 Nch IGBT for STROBE FLASHER Nch IGBT for STROBE FLASHER CY25AAJ-8 OUTLINE DRAWING Dimensions in mm 1.8 MAX. 5.0 0.4 1.27 EMITTER GATE COLLECTOR VCES ............................................................................... 400V ICM ...............
Otros transistores... DM2G150SH6A , DM2G50SH12A , DM2G50SH6A , DM2G50SH6N , DM2G75SH12A , DM2G75SH6A , DM2G75SH6N , CY20AAJ-8H , GT30J127 , SHD724401 , SHD724402 , SHD724502 , SHD724602 , SHD739601 , SHDG1025 , SHSMG1009 , SHSMG1010 .
History: STGB3NB60SD | STGF30M65DF2
History: STGB3NB60SD | STGF30M65DF2
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