All IGBT. CY25AAJ-8F Datasheet

 

CY25AAJ-8F Datasheet and Replacement


   Type Designator: CY25AAJ-8F
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 0.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic|ⓘ - Maximum Collector Current: 150(PULSE) A @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Package: SOP-8
      - IGBT Cross-Reference

 

CY25AAJ-8F Datasheet (PDF)

 ..1. Size:112K  renesas
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CY25AAJ-8F

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:38K  mitsubishi
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CY25AAJ-8F

MITSUBISHI IGBTMITSUBISHI IGBTCY25AAJ-8CY25AAJ-8Nch IGBT for STROBE FLASHERNch IGBT for STROBE FLASHERCY25AAJ-8 OUTLINE DRAWING Dimensions in mm 1.8 MAX.5.00.41.27 EMITTER GATE COLLECTOR VCES ............................................................................... 400V ICM ...............

Datasheet: DM2G150SH6A , DM2G50SH12A , DM2G50SH6A , DM2G50SH6N , DM2G75SH12A , DM2G75SH6A , DM2G75SH6N , CY20AAJ-8H , SGT40N60NPFDPN , SHD724401 , SHD724402 , SHD724502 , SHD724602 , SHD739601 , SHDG1025 , SHSMG1009 , SHSMG1010 .

History: APT40GP60BG | IXGT20N120B

Keywords - CY25AAJ-8F transistor datasheet

 CY25AAJ-8F cross reference
 CY25AAJ-8F equivalent finder
 CY25AAJ-8F lookup
 CY25AAJ-8F substitution
 CY25AAJ-8F replacement

 

 
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