CY25AAJ-8F PDF and Equivalents Search

 

CY25AAJ-8F PDF Specs and Replacement


   Type Designator: CY25AAJ-8F
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 0.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic| ⓘ - Maximum Collector Current: 150(PULSE) A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   Package: SOP-8
 

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CY25AAJ-8F PDF specs

 ..1. Size:112K  renesas
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CY25AAJ-8F

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.1. Size:38K  mitsubishi
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CY25AAJ-8F

MITSUBISHI IGBT MITSUBISHI IGBT CY25AAJ-8 CY25AAJ-8 Nch IGBT for STROBE FLASHER Nch IGBT for STROBE FLASHER CY25AAJ-8 OUTLINE DRAWING Dimensions in mm 1.8 MAX. 5.0 0.4 1.27 EMITTER GATE COLLECTOR VCES ............................................................................... 400V ICM .................. See More ⇒

Specs: DM2G150SH6A , DM2G50SH12A , DM2G50SH6A , DM2G50SH6N , DM2G75SH12A , DM2G75SH6A , DM2G75SH6N , CY20AAJ-8H , GT30J127 , SHD724401 , SHD724402 , SHD724502 , SHD724602 , SHD739601 , SHDG1025 , SHSMG1009 , SHSMG1010 .

History: NCE75T120VT | NCE75TD120WT4

Keywords - CY25AAJ-8F transistor spec

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