CY25AAJ-8F Datasheet and Replacement
Type Designator: CY25AAJ-8F
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 0.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
|Ic|ⓘ - Maximum Collector Current: 150(PULSE) A @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: SOP-8
- IGBT Cross-Reference
CY25AAJ-8F Datasheet (PDF)
cy25aaj-8f.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
cy25aaj-8.pdf

MITSUBISHI IGBTMITSUBISHI IGBTCY25AAJ-8CY25AAJ-8Nch IGBT for STROBE FLASHERNch IGBT for STROBE FLASHERCY25AAJ-8 OUTLINE DRAWING Dimensions in mm 1.8 MAX.5.00.41.27 EMITTER GATE COLLECTOR VCES ............................................................................... 400V ICM ...............
Datasheet: DM2G150SH6A , DM2G50SH12A , DM2G50SH6A , DM2G50SH6N , DM2G75SH12A , DM2G75SH6A , DM2G75SH6N , CY20AAJ-8H , SGT40N60NPFDPN , SHD724401 , SHD724402 , SHD724502 , SHD724602 , SHD739601 , SHDG1025 , SHSMG1009 , SHSMG1010 .
History: APT40GP60BG | IXGT20N120B
Keywords - CY25AAJ-8F transistor datasheet
CY25AAJ-8F cross reference
CY25AAJ-8F equivalent finder
CY25AAJ-8F lookup
CY25AAJ-8F substitution
CY25AAJ-8F replacement
History: APT40GP60BG | IXGT20N120B



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