CY25AAJ-8F PDF Specs and Replacement
Type Designator: CY25AAJ-8F
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 0.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
|Ic| ⓘ - Maximum Collector Current: 150(PULSE) A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
Package: SOP-8
CY25AAJ-8F Substitution
CY25AAJ-8F PDF specs
cy25aaj-8f.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
cy25aaj-8.pdf
MITSUBISHI IGBT MITSUBISHI IGBT CY25AAJ-8 CY25AAJ-8 Nch IGBT for STROBE FLASHER Nch IGBT for STROBE FLASHER CY25AAJ-8 OUTLINE DRAWING Dimensions in mm 1.8 MAX. 5.0 0.4 1.27 EMITTER GATE COLLECTOR VCES ............................................................................... 400V ICM .................. See More ⇒
Specs: DM2G150SH6A , DM2G50SH12A , DM2G50SH6A , DM2G50SH6N , DM2G75SH12A , DM2G75SH6A , DM2G75SH6N , CY20AAJ-8H , GT30J127 , SHD724401 , SHD724402 , SHD724502 , SHD724602 , SHD739601 , SHDG1025 , SHSMG1009 , SHSMG1010 .
History: NCE75T120VT | NCE75TD120WT4
Keywords - CY25AAJ-8F transistor spec
CY25AAJ-8F cross reference
CY25AAJ-8F equivalent finder
CY25AAJ-8F lookup
CY25AAJ-8F substitution
CY25AAJ-8F replacement
History: NCE75T120VT | NCE75TD120WT4
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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