VS-GB100LP120N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-GB100LP120N
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 658 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 38 nS
Coesⓘ - Capacitancia de salida, typ: 520 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
VS-GB100LP120N Datasheet (PDF)
vs-gb100lp120n.pdf

VS-GB100LP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 100 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW
vs-gb100lh120n.pdf

VS-GB100LH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in1 Package, 1200 V and 100 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD
vs-gb100th120u.pdf

VS-GB100TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V and 100 AFEATURES NPT IGBT technology 10 s short circuit capability Low switching losses Rugged with ultrafast performance VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWDDouble INT-A-P
vs-gb100th120n.pdf

VS-GB100TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 100 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper base
Otros transistores... SHD724402 , SHD724502 , SHD724602 , SHD739601 , SHDG1025 , SHSMG1009 , SHSMG1010 , VS-GB100LH120N , GT30F126 , VS-GB100NH120N , VS-GB100TH120N , VS-GB100TH120U , VS-GB100TP120N , VS-GB100TP120U , VS-GB100TS60NPBF , VS-GB150LH120N , VS-GB150TH120N .
History: 7MBR100VP060-50 | IRGP4068DPBF | SKM300GAR123D | MMG200DR120B | SKM100GB12T4 | IXGT30N60C3D1 | APT47GA60JD40
History: 7MBR100VP060-50 | IRGP4068DPBF | SKM300GAR123D | MMG200DR120B | SKM100GB12T4 | IXGT30N60C3D1 | APT47GA60JD40



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