VS-GB100LP120N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-GB100LP120N
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 658 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 38 nS
Coesⓘ - Capacitancia de salida, typ: 520 pF
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de VS-GB100LP120N IGBT
VS-GB100LP120N Datasheet (PDF)
vs-gb100lp120n.pdf

VS-GB100LP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 100 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW
vs-gb100lh120n.pdf

VS-GB100LH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in1 Package, 1200 V and 100 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD
vs-gb100th120u.pdf

VS-GB100TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V and 100 AFEATURES NPT IGBT technology 10 s short circuit capability Low switching losses Rugged with ultrafast performance VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWDDouble INT-A-P
vs-gb100th120n.pdf

VS-GB100TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 100 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper base
Otros transistores... SHD724402 , SHD724502 , SHD724602 , SHD739601 , SHDG1025 , SHSMG1009 , SHSMG1010 , VS-GB100LH120N , GT30F126 , VS-GB100NH120N , VS-GB100TH120N , VS-GB100TH120U , VS-GB100TP120N , VS-GB100TP120U , VS-GB100TS60NPBF , VS-GB150LH120N , VS-GB150TH120N .
History: 2M410V1 | VS-GB75LP120N | FPF2C8P2NL07A | NGTB30N120IHS | ART20U120 | FGH40N60SFDTU-F085 | STGW80V60DF
History: 2M410V1 | VS-GB75LP120N | FPF2C8P2NL07A | NGTB30N120IHS | ART20U120 | FGH40N60SFDTU-F085 | STGW80V60DF



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
c1740 transistor | c828 transistor | c4467 | c2383 transistor | 2n3055 equivalent | s9015 datasheet | 2n6488 | 30j127 datasheet