All IGBT. VS-GB100LP120N Datasheet

 

VS-GB100LP120N Datasheet and Replacement


   Type Designator: VS-GB100LP120N
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 658 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 38 nS
   Coesⓘ - Output Capacitance, typ: 520 pF
   Package: MODULE
 

 VS-GB100LP120N substitution

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VS-GB100LP120N Datasheet (PDF)

 ..1. Size:114K  vishay
vs-gb100lp120n.pdf pdf_icon

VS-GB100LP120N

VS-GB100LP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 100 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW

 5.1. Size:156K  vishay
vs-gb100lh120n.pdf pdf_icon

VS-GB100LP120N

VS-GB100LH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in1 Package, 1200 V and 100 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD

 6.1. Size:158K  vishay
vs-gb100th120u.pdf pdf_icon

VS-GB100LP120N

VS-GB100TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V and 100 AFEATURES NPT IGBT technology 10 s short circuit capability Low switching losses Rugged with ultrafast performance VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWDDouble INT-A-P

 6.2. Size:153K  vishay
vs-gb100th120n.pdf pdf_icon

VS-GB100LP120N

VS-GB100TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 100 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper base

Datasheet: SHD724402 , SHD724502 , SHD724602 , SHD739601 , SHDG1025 , SHSMG1009 , SHSMG1010 , VS-GB100LH120N , GT30F126 , VS-GB100NH120N , VS-GB100TH120N , VS-GB100TH120U , VS-GB100TP120N , VS-GB100TP120U , VS-GB100TS60NPBF , VS-GB150LH120N , VS-GB150TH120N .

History: STGB19NC60H | TA49113 | IXRP15N120 | MG10Q6ES50A | IXGT30N60C2D1 | IXGT30N60C3D1 | IXGT32N100A3

Keywords - VS-GB100LP120N transistor datasheet

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