VS-GA200HS60S1PBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VS-GA200HS60S1PBF Datasheet (PDF)

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VS-GA200HS60S1PbFwww.vishay.comVishay SemiconductorsINT-A-PAK Half Bridge IGBT(Standard Speed IGBT), 200 AFEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Very low conduction losses Industry standard package UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compl

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VS-GA200SA60UPwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 AFEATURES Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typi

6.2. Size:156K vishay
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VS-GA200TH60Swww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 600 V and 200 AFEATURES High short circuit capability 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Latch-up free Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery antiparalle

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