VS-GA200HS60S1PBF IGBT. Datasheet pdf. Equivalent
Type Designator: VS-GA200HS60S1PBF
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 430
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 1.13
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 200
Maximum Junction Temperature (Tj), °C: 150
Maximum Collector Capacity (Cc), pF: 2080
Package: MODULE
VS-GA200HS60S1PBF Transistor Equivalent Substitute - IGBT Cross-Reference Search
VS-GA200HS60S1PBF IGBT. Datasheet pdf. Equivalent
Type Designator: VS-GA200HS60S1PBF
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 430
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 1.13
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 200
Maximum Junction Temperature (Tj), °C: 150
Maximum Collector Capacity (Cc), pF: 2080
Package: MODULE
VS-GA200HS60S1PBF Transistor Equivalent Substitute - IGBT Cross-Reference Search
VS-GA200HS60S1PBF Datasheet (PDF)
0.1. vs-ga200hs60s1pbf.pdf 
Size:145K _vishay
VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors INT-A-PAK Half Bridge IGBT (Standard Speed IGBT), 200 A FEATURES • Gen 4 IGBT technology • Standard: optimized for hard switching speed • Very low conduction losses • Industry standard package • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compl
6.1. vs-ga200th60s.pdf Size:156K _vishay
VS-GA200TH60S www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 200 A FEATURES • High short circuit capability • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Latch-up free • Low inductance case Double INT-A-PAK • Fast and soft reverse recovery antiparalle
6.2. vs-ga200sa60up.pdf Size:277K _vishay
VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES • Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package (2500 VAC/RMS) • Very low internal inductance ( 5 nH typi
Datasheet: VS-GB150TH120U , VS-GB150TS60NPBF , VS-GB200LH120N , VS-GB200NH120N , VS-GB200TH120N , VS-GB200TH120U , VS-GB200TS60NPBF , VS-GA100TS60SFPBF , IXGH60N60C2 , VS-GA200SA60UP , VS-GA200TH60S , VS-GA250SA60S , VS-GB300AH120N , VS-GB300LH120N , VS-GB300NH120N , VS-GB300TH120N , VS-GB300TH120U .
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