Справочник IGBT. VS-GA200HS60S1PBF

 

VS-GA200HS60S1PBF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: VS-GA200HS60S1PBF

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 430

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.13

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 200

Максимальная температура перехода (Tj): 150

Емкость коллектора (Cc), pf: 2080

Корпус: MODULE

Аналог (замена) для VS-GA200HS60S1PBF

 

 

VS-GA200HS60S1PBF Datasheet (PDF)

1.1. vs-ga200hs60s1pbf.pdf Size:145K _vishay

VS-GA200HS60S1PBF
VS-GA200HS60S1PBF

VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors INT-A-PAK Half Bridge IGBT (Standard Speed IGBT), 200 A FEATURES • Gen 4 IGBT technology • Standard: optimized for hard switching speed • Very low conduction losses • Industry standard package • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compl

2.1. vs-ga200th60s.pdf Size:156K _vishay

VS-GA200HS60S1PBF
VS-GA200HS60S1PBF

VS-GA200TH60S www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 200 A FEATURES • High short circuit capability • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Latch-up free • Low inductance case Double INT-A-PAK • Fast and soft reverse recovery antiparalle

2.2. vs-ga200sa60up.pdf Size:277K _vishay

VS-GA200HS60S1PBF
VS-GA200HS60S1PBF

VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES • Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package (2500 VAC/RMS) • Very low internal inductance ( 5 nH typi

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