VS-GB50TP120N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-GB50TP120N
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 446 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 74 nS
Coesⓘ - Capacitancia de salida, typ: 300 pF
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de VS-GB50TP120N - IGBT
VS-GB50TP120N Datasheet (PDF)
vs-gb50tp120n.pdf
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vs-gb50lp120n.pdf
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vs-gb50la120ux.pdf
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vs-gb50na120ux.pdf
VS-GB50NA120UXwww.vishay.comVishay SemiconductorsHigh Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 AFEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E7
Otros transistores... VS-GB300TH120U , VS-GB400AH120N , VS-GB400AH120U , VS-GB400TH120N , VS-GB400TH120U , VS-GB50LA120UX , VS-GB50LP120N , VS-GB50NA120UX , GT45F122 , VS-GB50YF120N , VS-GB55LA120UX , VS-GB55NA120UX , VS-GB600AH120N , VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , VS-GB75TP120N .
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