VS-GB50TP120N IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VS-GB50TP120N datasheet

..1. Size:88K vishay
vs-gb50tp120n.pdf pdf_icon

VS-GB50TP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A FEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isol

7.1. Size:221K vishay
vs-gb50yf120n.pdf pdf_icon

VS-GB50YF120N www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 50 A FEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization for definitions of

7.2. Size:120K vishay
vs-gb50lp120n.pdf pdf_icon

VS-GB50LP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 50 A FEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bonding) technology VCE(on) w

7.3. Size:172K vishay
vs-gb50la120ux.pdf pdf_icon

VS-GB50LA120UX www.vishay.com Vishay Semiconductors Low Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78