All IGBT. VS-GB50TP120N Datasheet

 

VS-GB50TP120N Datasheet and Replacement


   Type Designator: VS-GB50TP120N
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 446 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 74 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Package: MODULE
      - IGBT Cross-Reference

 

VS-GB50TP120N Datasheet (PDF)

 ..1. Size:88K  vishay
vs-gb50tp120n.pdf pdf_icon

VS-GB50TP120N

VS-GB50TP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 50 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isol

 7.1. Size:221K  vishay
vs-gb50yf120n.pdf pdf_icon

VS-GB50TP120N

VS-GB50YF120Nwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 50 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization: for definitions of

 7.2. Size:120K  vishay
vs-gb50lp120n.pdf pdf_icon

VS-GB50TP120N

VS-GB50LP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, Chopper in 1 Package, 1200 V and 50 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bonding) technology VCE(on) w

 7.3. Size:172K  vishay
vs-gb50la120ux.pdf pdf_icon

VS-GB50TP120N

VS-GB50LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 AFEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IXGT20N120 | CM1400DU-24NF | JNG75T65HYU2 | TT050K065FQ | IXBH22N300HV | MMG150W120X6TN | CRG15T120BK3SD

Keywords - VS-GB50TP120N transistor datasheet

 VS-GB50TP120N cross reference
 VS-GB50TP120N equivalent finder
 VS-GB50TP120N lookup
 VS-GB50TP120N substitution
 VS-GB50TP120N replacement

 

 
Back to Top

 


 
.