VS-GB75TP120N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-GB75TP120N
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 543
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 75
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.9
Tensión máxima de puerta-umbral |VGE(th)|, V: 7
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 67
Capacitancia de salida (Cc), typ, pF: 400
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de VS-GB75TP120N - IGBT
VS-GB75TP120N Datasheet (PDF)
vs-gb75tp120n.pdf
VS-GB75TP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT 2-in 1-Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x I 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Cop
vs-gb75tp120u.pdf
VS-GB75TP120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Rugged with ultrafast performance Square RBSOA Low inductance case Fast and soft reverse recovery antiparalle
vs-gb75yf120n.pdf
VS-GB75YF120Nwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 75 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization: for definitions of
vs-gb75na60uf.pdf
VS-GB75NA60UFwww.vishay.comVishay Semiconductors"High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 150 kHz Square RBSOA Low VCE(on) FRED Pt hyperfast rectifier Fully isolated packageSOT-227 Very low internal inductance ( 5
vs-gb75la60uf.pdf
VS-GB75LA60UFwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 150 kHz Square RBSOA Low VCE(on) FRED Pt hyperfast rectifierSOT-227 Fully isolated package Very low internal inductance ( 5 n
vs-gb75yf120ut.pdf
VS-GB75YF120UTwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 75 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design UL approved file E78996 Material categorization: for definitions of compliance ECONO2 4PACK please see www.vishay.com/doc?99912
vs-gb75lp120n.pdf
VS-GB75LP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery anti-parallel FWD
Otros transistores... VS-GB50TP120N , VS-GB50YF120N , VS-GB55LA120UX , VS-GB55NA120UX , VS-GB600AH120N , VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , SGP30N60 , VS-GB75TP120U , VS-GB75YF120N , VS-GB75YF120UT , VS-GB90DA120U , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S .
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