All IGBT. VS-GB75TP120N Datasheet

 

VS-GB75TP120N IGBT. Datasheet pdf. Equivalent


   Type Designator: VS-GB75TP120N
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 543 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 67 nS
   Coesⓘ - Output Capacitance, typ: 400 pF
   Package: MODULE

 VS-GB75TP120N Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

VS-GB75TP120N Datasheet (PDF)

 ..1. Size:118K  vishay
vs-gb75tp120n.pdf

VS-GB75TP120N
VS-GB75TP120N

VS-GB75TP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT 2-in 1-Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x I 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Cop

 2.1. Size:88K  vishay
vs-gb75tp120u.pdf

VS-GB75TP120N
VS-GB75TP120N

VS-GB75TP120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Rugged with ultrafast performance Square RBSOA Low inductance case Fast and soft reverse recovery antiparalle

 7.1. Size:221K  vishay
vs-gb75yf120n.pdf

VS-GB75TP120N
VS-GB75TP120N

VS-GB75YF120Nwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 75 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization: for definitions of

 7.2. Size:155K  vishay
vs-gb75na60uf.pdf

VS-GB75TP120N
VS-GB75TP120N

VS-GB75NA60UFwww.vishay.comVishay Semiconductors"High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 150 kHz Square RBSOA Low VCE(on) FRED Pt hyperfast rectifier Fully isolated packageSOT-227 Very low internal inductance ( 5

 7.3. Size:155K  vishay
vs-gb75la60uf.pdf

VS-GB75TP120N
VS-GB75TP120N

VS-GB75LA60UFwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 150 kHz Square RBSOA Low VCE(on) FRED Pt hyperfast rectifierSOT-227 Fully isolated package Very low internal inductance ( 5 n

 7.4. Size:224K  vishay
vs-gb75yf120ut.pdf

VS-GB75TP120N
VS-GB75TP120N

VS-GB75YF120UTwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 75 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design UL approved file E78996 Material categorization: for definitions of compliance ECONO2 4PACK please see www.vishay.com/doc?99912

 7.5. Size:119K  vishay
vs-gb75lp120n.pdf

VS-GB75TP120N
VS-GB75TP120N

VS-GB75LP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery anti-parallel FWD

Datasheet: VS-GB50TP120N , VS-GB50YF120N , VS-GB55LA120UX , VS-GB55NA120UX , VS-GB600AH120N , VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , MGD623S , VS-GB75TP120U , VS-GB75YF120N , VS-GB75YF120UT , VS-GB90DA120U , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S .

 

 
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