VS-GB75TP120U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-GB75TP120U
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 400 pF
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de VS-GB75TP120U - IGBT
VS-GB75TP120U Datasheet (PDF)
vs-gb75tp120u.pdf
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vs-gb75tp120n.pdf
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vs-gb75yf120n.pdf
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vs-gb75na60uf.pdf
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vs-gb75la60uf.pdf
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vs-gb75yf120ut.pdf
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vs-gb75lp120n.pdf
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