All IGBT. VS-GB75TP120U Datasheet

 

VS-GB75TP120U Datasheet and Replacement


   Type Designator: VS-GB75TP120U
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 400 pF
   Package: MODULE
      - IGBT Cross-Reference

 

VS-GB75TP120U Datasheet (PDF)

 ..1. Size:88K  vishay
vs-gb75tp120u.pdf pdf_icon

VS-GB75TP120U

VS-GB75TP120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Rugged with ultrafast performance Square RBSOA Low inductance case Fast and soft reverse recovery antiparalle

 2.1. Size:118K  vishay
vs-gb75tp120n.pdf pdf_icon

VS-GB75TP120U

VS-GB75TP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT 2-in 1-Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x I 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Cop

 7.1. Size:221K  vishay
vs-gb75yf120n.pdf pdf_icon

VS-GB75TP120U

VS-GB75YF120Nwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 75 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization: for definitions of

 7.2. Size:155K  vishay
vs-gb75na60uf.pdf pdf_icon

VS-GB75TP120U

VS-GB75NA60UFwww.vishay.comVishay Semiconductors"High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 150 kHz Square RBSOA Low VCE(on) FRED Pt hyperfast rectifier Fully isolated packageSOT-227 Very low internal inductance ( 5

Datasheet: VS-GB50YF120N , VS-GB55LA120UX , VS-GB55NA120UX , VS-GB600AH120N , VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , VS-GB75TP120N , IHW40T60 , VS-GB75YF120N , VS-GB75YF120UT , VS-GB90DA120U , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S .

History: IXXH100N60B3

Keywords - VS-GB75TP120U transistor datasheet

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