VS-GB90DA120U Todos los transistores

 

VS-GB90DA120U IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VS-GB90DA120U

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 414 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃

trⓘ - Tiempo de subida, typ: 38 nS

Encapsulados: SOT-227

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VS-GB90DA120U datasheet

 ..1. Size:322K  vishay
vs-gb90da120u.pdf pdf_icon

VS-GB90DA120U

VS-GB90DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A FEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nH typical) SOT-227 Industry standard outline UL appro

 5.1. Size:305K  vishay
vs-gb90da60u.pdf pdf_icon

VS-GB90DA120U

VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 A FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Square RBSOA HEXFRED anti-parallel diodes with ultrasoft reverse recovery Fully isolated package Very low internal inductance ( 5 nH typical) SOT-227 Industry st

 7.1. Size:291K  vishay
vs-gb90sa120u.pdf pdf_icon

VS-GB90DA120U

VS-GB90SA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A FEATURES NPT Gen 5 IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline SOT-227 UL approved file E78996 Material categorization

 9.1. Size:145K  vishay
vs-gb55la120ux.pdf pdf_icon

VS-GB90DA120U

VS-GB55LA120UX www.vishay.com Vishay Semiconductors Low Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHz SOT-227 Very low internal inductance ( 5 nH typical) Industry standard

Otros transistores... VS-GB600AH120N , VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , VS-GB75TP120N , VS-GB75TP120U , VS-GB75YF120N , VS-GB75YF120UT , IHW40T60 , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U .

 

 

 


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