VS-GB90DA120U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-GB90DA120U
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 414 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 38 nS
Paquete / Cubierta: SOT-227
Búsqueda de reemplazo de VS-GB90DA120U - IGBT
VS-GB90DA120U Datasheet (PDF)
vs-gb90da120u.pdf
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vs-gb400th120n.pdf
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vs-gb400ah120u.pdf
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vs-gb50la120ux.pdf
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vs-gb200th120n.pdf
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vs-gb150lh120n.pdf
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vs-gb100th120n.pdf
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vs-gb75la60uf.pdf
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vs-gb150th120u.pdf
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vs-gb150th120n.pdf
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vs-gb300nh120n.pdf
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vs-gb100tp120u.pdf
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vs-gb75yf120ut.pdf
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vs-gb300lh120n.pdf
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vs-gb200nh120n.pdf
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vs-gb100ts60npbf.pdf
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vs-gb50na120ux.pdf
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vs-gb50tp120n.pdf
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vs-gb100tp120n.pdf
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vs-gb100nh120n.pdf
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vs-gb300th120n.pdf
VS-GB300TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 300 AFEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bondin
vs-gb300ah120n.pdf
VS-GB300AH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 1-in-1 Package, 1200 V and 300 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Dir
vs-gb70la60uf.pdf
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vs-gb150ts60npbf.pdf
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vs-gb75lp120n.pdf
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vs-gb55na120ux.pdf
VS-GB55NA120UXwww.vishay.comVishay SemiconductorsHigh Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 AFEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHzSOT-227 Very low internal inductance ( 5 nH typical) Industry standar
vs-gb75tp120n.pdf
VS-GB75TP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT 2-in 1-Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x I 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Cop
vs-gb100lp120n.pdf
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vs-gb600ah120n.pdf
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vs-gb70na60uf.pdf
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vs-gb200th120u.pdf
VS-GB200TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 200 AFEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low switching losses Rugged with ultrafast performance Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery
vs-gb400ah120n.pdf
VS-GB400AH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 1-in-1 Package, 1200 V and 400 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Dir
vs-gb400th120u.pdf
VS-GB400TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V and 400 AFEATURES 10 s short circuit capability Low switching losses Rugged with ultrafast performance VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB
Otros transistores... VS-GB600AH120N , VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , VS-GB75TP120N , VS-GB75TP120U , VS-GB75YF120N , VS-GB75YF120UT , GT30F125 , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U .
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