VS-GB90DA120U PDF and Equivalents Search

 

VS-GB90DA120U Specs and Replacement

Type Designator: VS-GB90DA120U

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 414 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 90 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃

tr ⓘ - Rise Time, typ: 38 nS

Package: SOT-227

 VS-GB90DA120U Substitution

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VS-GB90DA120U datasheet

 ..1. Size:322K  vishay
vs-gb90da120u.pdf pdf_icon

VS-GB90DA120U

VS-GB90DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A FEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nH typical) SOT-227 Industry standard outline UL appro... See More ⇒

 5.1. Size:305K  vishay
vs-gb90da60u.pdf pdf_icon

VS-GB90DA120U

VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 A FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Square RBSOA HEXFRED anti-parallel diodes with ultrasoft reverse recovery Fully isolated package Very low internal inductance ( 5 nH typical) SOT-227 Industry st... See More ⇒

 7.1. Size:291K  vishay
vs-gb90sa120u.pdf pdf_icon

VS-GB90DA120U

VS-GB90SA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A FEATURES NPT Gen 5 IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline SOT-227 UL approved file E78996 Material categorization ... See More ⇒

 9.1. Size:145K  vishay
vs-gb55la120ux.pdf pdf_icon

VS-GB90DA120U

VS-GB55LA120UX www.vishay.com Vishay Semiconductors Low Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHz SOT-227 Very low internal inductance ( 5 nH typical) Industry standard... See More ⇒

Specs: VS-GB600AH120N , VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , VS-GB75TP120N , VS-GB75TP120U , VS-GB75YF120N , VS-GB75YF120UT , IHW40T60 , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U .

History: SGW6N60UF | VS-GB90DA60U

Keywords - VS-GB90DA120U transistor spec

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 VS-GB90DA120U equivalent finder
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History: SGW6N60UF | VS-GB90DA60U

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