Справочник IGBT. VS-GB90DA120U

 

VS-GB90DA120U Даташит. Аналоги. Параметры и характеристики.


   Наименование: VS-GB90DA120U
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 414 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 90 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.3 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 38 nS
   Тип корпуса: SOT-227
     - подбор IGBT транзистора по параметрам

 

VS-GB90DA120U Datasheet (PDF)

 ..1. Size:322K  vishay
vs-gb90da120u.pdfpdf_icon

VS-GB90DA120U

VS-GB90DA120Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast IGBT), 90 AFEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nH typical)SOT-227 Industry standard outline UL appro

 5.1. Size:305K  vishay
vs-gb90da60u.pdfpdf_icon

VS-GB90DA120U

VS-GB90DA60Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Square RBSOA HEXFRED anti-parallel diodes with ultrasoft reverse recovery Fully isolated package Very low internal inductance ( 5 nH typical)SOT-227 Industry st

 7.1. Size:291K  vishay
vs-gb90sa120u.pdfpdf_icon

VS-GB90DA120U

VS-GB90SA120Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast IGBT), 90 AFEATURES NPT Gen 5 IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outlineSOT-227 UL approved file E78996 Material categorization:

 9.1. Size:145K  vishay
vs-gb55la120ux.pdfpdf_icon

VS-GB90DA120U

VS-GB55LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 AFEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHzSOT-227 Very low internal inductance ( 5 nH typical) Industry standard

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SMC7G20US60 | XD040Q120AT1S3 | APTGT100A120D1 | 2MBI300TA-060 | 2MBI150VA-120-50 | SKM50GAL12T4 | 2MBI150PC-140

 

 
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