F3L100R12W2H3_B11 Todos los transistores

 

F3L100R12W2H3_B11 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: F3L100R12W2H3_B11

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 375 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Encapsulados: MODULE

 Búsqueda de reemplazo de F3L100R12W2H3_B11 IGBT

- Selección ⓘ de transistores por parámetros

 

F3L100R12W2H3_B11 datasheet

 0.1. Size:1149K  infineon
f3l100r12w2h3 b11.pdf pdf_icon

F3L100R12W2H3_B11

/ Technical Information IGBT- F3L100R12W2H3_B11 IGBT-Module EasyPACK 2 and PressFIT / NTC EasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC / Preliminary Data V = 1200V CES I = 50A

 1.1. Size:985K  infineon
f3l100r12w2h3-b11.pdf pdf_icon

F3L100R12W2H3_B11

Technische Information / Technical Information IGBT-Modul F3L100R12W2H3_B11 IGBT-Module EasyPACK Modul mit aktiver "Neutral Point Clamp 2" Topologie und PressFIT / NTC EasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC Vorl ufige Daten / Preliminary Data V = 1200V CES I = 50A / I = 100A C nom CRM Typische Anwendungen Typical Applications 3-Level-

 7.1. Size:767K  infineon
f3l100r07w2e3 b11.pdf pdf_icon

F3L100R12W2H3_B11

Technische Information / Technical Information IGBT-Module F3L100R07W2E3_B11 IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC Vorl ufige Daten / Preliminary Data V = 650V CES I = 100A / I = 200A C nom CRM Typische Anwendungen Typic

 7.2. Size:819K  infineon
f3l100r07w2e3-b11.pdf pdf_icon

F3L100R12W2H3_B11

Technische Information / Technical Information IGBT-Module F3L100R07W2E3_B11 IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC Vorl ufige Daten / Preliminary Data V = 650V CES I = 100A / I = 200A C nom CRM Typische Anwendungen Typic

Otros transistores... VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U , VS-ETL015Y120H , F12-25R12KT4G , F12-35R12KT4G , F3L100R07W2E3_B11 , GT60N321 , F3L150R07W2E3_B11 , F3L150R12W2H3_B11 , F3L15R12W2H3_B27 , F3L200R07PE4 , F3L200R12W2H3_B11 , F3L300R12ME4_B22 , F3L300R12ME4_B23 , F3L300R12MT4_B22 .

History: ISL9V5036P3 | IXSH45N120B | SKM600GB126D | SPD15N65T1T0TL | SGR5N60RUF

 

 

 


History: ISL9V5036P3 | IXSH45N120B | SKM600GB126D | SPD15N65T1T0TL | SGR5N60RUF

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

2sc1166 | jcs9n50fc datasheet | 2n2147 | 2sc870 | 2sa771 | d667 | a965 transistor | hy3210

 

 

↑ Back to Top
.