All IGBT. F3L100R12W2H3_B11 Datasheet

 

F3L100R12W2H3_B11 Datasheet and Replacement


   Type Designator: F3L100R12W2H3_B11
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Package: MODULE
      - IGBT Cross-Reference

 

F3L100R12W2H3_B11 Datasheet (PDF)

 0.1. Size:1149K  infineon
 f3l100r12w2h3 b11.pdf pdf_icon

F3L100R12W2H3_B11

/ Technical InformationIGBT-F3L100R12W2H3_B11IGBT-ModuleEasyPACK 2 and PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC / Preliminary Data V = 1200VCESI = 50A

 1.1. Size:985K  infineon
 f3l100r12w2h3-b11.pdf pdf_icon

F3L100R12W2H3_B11

Technische Information / Technical InformationIGBT-ModulF3L100R12W2H3_B11IGBT-ModuleEasyPACK Modul mit aktiver "Neutral Point Clamp 2" Topologie und PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTCVorlufige Daten / Preliminary Data V = 1200VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications 3-Level-

 7.1. Size:767K  infineon
 f3l100r07w2e3 b11.pdf pdf_icon

F3L100R12W2H3_B11

Technische Information / Technical InformationIGBT-ModuleF3L100R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 100A / I = 200AC nom CRMTypische Anwendungen Typic

 7.2. Size:819K  infineon
 f3l100r07w2e3-b11.pdf pdf_icon

F3L100R12W2H3_B11

Technische Information / Technical InformationIGBT-ModuleF3L100R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 100A / I = 200AC nom CRMTypische Anwendungen Typic

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Datasheet: VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U , VS-ETL015Y120H , F12-25R12KT4G , F12-35R12KT4G , F3L100R07W2E3_B11 , FGH30S130P , F3L150R07W2E3_B11 , F3L150R12W2H3_B11 , F3L15R12W2H3_B27 , F3L200R07PE4 , F3L200R12W2H3_B11 , F3L300R12ME4_B22 , F3L300R12ME4_B23 , F3L300R12MT4_B22 .

History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50

Keywords - F3L100R12W2H3_B11 transistor datasheet

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 F3L100R12W2H3_B11 equivalent finder
 F3L100R12W2H3_B11 lookup
 F3L100R12W2H3_B11 substitution
 F3L100R12W2H3_B11 replacement

 

 
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