HCKW60N65BH2A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HCKW60N65BH2A  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 375 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 136 nS

Coesⓘ - Capacitancia de salida, typ: 190 pF

Encapsulados: TO247

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HCKW60N65BH2A datasheet

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 hckw60n65bh2a.pdf pdf_icon

HCKW60N65BH2A

HCKW60N65BH2A @ Trench-FS Cool-Watt IGBT HCKW60N65BH2A is a 650V60A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a anti-parallel diode,has the characteristics of low V , high junction temperature and strong robustness. It is very suitable for products with cesat high switching frequency. Features CoolWatt@ Trench-FS techno

 5.1. Size:5624K  cn vgsemi
 hckw60n65ch2a.pdf pdf_icon

HCKW60N65BH2A

HCKW60N65CH2A @ CoolWatt IGBT HCKW60N65CH2A is a 650V60A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a anti-parallel diode,has the characteristics of low V , high junction temperature and strong robustness. It is very suitable for products with cesat high switching frequency. Features CoolWatt@ Trench-FS technology L

Otros transistores... 1MBH15D-120, 1MBH20D-060, 1MBH25-120, 1MBH25D-120, 1MBH30D-060, 1MBH50-060, 1MBH50D-060, HCKW40N65H2, FGPF4633, HCKW60N65CH2A, HCKW75N65BH2, HCKW75N65FH2, 2N6975, 2N6976, 2N6977, 2N6978, 2PG352