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HCKW60N65BH2A Spec and Replacement


   Type Designator: HCKW60N65BH2A
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 136 nS
   Coesⓘ - Output Capacitance, typ: 190 pF
   Package: TO247

 HCKW60N65BH2A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HCKW60N65BH2A specs

 ..1. Size:1383K  cn vgsemi
 hckw60n65bh2a.pdf pdf_icon

HCKW60N65BH2A

HCKW60N65BH2A @ Trench-FS Cool-Watt IGBT HCKW60N65BH2A is a 650V60A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a anti-parallel diode,has the characteristics of low V , high junction temperature and strong robustness. It is very suitable for products with cesat high switching frequency. Features CoolWatt@ Trench-FS techno... See More ⇒

 5.1. Size:5624K  cn vgsemi
 hckw60n65ch2a.pdf pdf_icon

HCKW60N65BH2A

HCKW60N65CH2A @ CoolWatt IGBT HCKW60N65CH2A is a 650V60A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a anti-parallel diode,has the characteristics of low V , high junction temperature and strong robustness. It is very suitable for products with cesat high switching frequency. Features CoolWatt@ Trench-FS technology L... See More ⇒

Specs: 1MBH15D-120 , 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , 1MBH50D-060 , HCKW40N65H2 , FGPF4633 , HCKW60N65CH2A , HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 .

History: GT60M303

Keywords - HCKW60N65BH2A transistor spec

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