HGTP3N60A4D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGTP3N60A4D
Tipo de transistor: IGBT + Diode
Código de marcado: 3N60A4D
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 70 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 17 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 11 nS
Qgⓘ - Carga total de la puerta, typ: 21 nC
Paquete / Cubierta: TO220AB
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HGTP3N60A4D Datasheet (PDF)
hgtd3n60a4s hgtp3n60a4.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
hgtd3n60c3s hgtp3n60c3.pdf
HGTD3N60C3S, HGTP3N60C3Data Sheet December 20016A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTD3N60C3S and the HGTP3N60C3 are MOS gated 6A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 1
hgtp3n60c3d hgt1s3n60c3d hgt1s3n60c3ds.pdf
HGTP3N60C3D, HGT1S3N60C3D,S E M I C O N D U C T O RHGT1S3N60C3DS6A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeMay 1996Features PackagingJEDEC TO-220AB 6A, 600V at TC = +25oCEMITTERCOLLECTOR 600V Switching SOA CapabilityGATE Typical Fall Time - 130ns at TJ = +150oCCOLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss
hgtp3n60b3d hgt1s3n60b3ds.pdf
HGTP3N60B3D, HGT1S3N60B3DSData Sheet January 2000 File Number 4414.17A, 600V, UFS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode 7A, 600V TC = 25oCThe HGTP3N60B3D and HGT1S3N60B3DS are MOS gated 600V Switching SOA Capabilityhigh voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oCo
hgtp3n60.pdf
HGTP3N60C3D, HGT1S3N60C3D,S E M I C O N D U C T O RHGT1S3N60C3DS6A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeMay 1996Features PackagingJEDEC TO-220AB 6A, 600V at TC = +25oCEMITTERCOLLECTOR 600V Switching SOA CapabilityGATE Typical Fall Time - 130ns at TJ = +150oCCOLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss
Otros transistores... HGTP20N60B3 , HGTP20N60C3 , HGTP20N60C3R , HGTP2N120BN , HGTP2N120BND , HGTP2N120CN , HGTP2N120CND , HGTP3N60A4 , GT30F131 , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2