HGTP3N60A4D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTP3N60A4D

Polaridad de transistor: N-Channel

Tensión colector-emisor (Vce): 600

Temperatura operativa máxima (Tj), °C: 150

Empaquetado / Estuche: TO220AB

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HGTP3N60A4D Datasheet (PDF)

6.1. hgtp3n60.pdf Size:390K _harris_semi

HGTP3N60C3D, HGT1S3N60C3D,S E M I C O N D U C T O RHGT1S3N60C3DS6A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeMay 1996Features PackagingJEDEC TO-220AB 6A, 600V at TC = +25oCEMITTERCOLLECTOR 600V Switching SOA CapabilityGATE Typical Fall Time - 130ns at TJ = +150oCCOLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss

Otros transistores... HGTP20N60B3 , HGTP20N60C3 , HGTP20N60C3R , HGTP2N120BN , HGTP2N120BND , HGTP2N120CN , HGTP2N120CND , HGTP3N60A4 , SGW10N60A , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND .