All IGBT. HGTP3N60A4D Datasheet

 

HGTP3N60A4D IGBT. Datasheet pdf. Equivalent

Type Designator: HGTP3N60A4D

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Junction Temperature (Tj), °C: 150

Package: TO220AB

HGTP3N60A4D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTP3N60A4D Datasheet (PDF)

6.1. hgtp3n60.pdf Size:390K _harris_semi

HGTP3N60A4D HGTP3N60A4D

HGTP3N60C3D, HGT1S3N60C3D, S E M I C O N D U C T O R HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = +25oC EMITTER COLLECTOR • 600V Switching SOA Capability GATE • Typical Fall Time - 130ns at TJ = +150oC COLLECTOR (FLANGE) • Short Circuit Rating • Low Conduction Loss

Datasheet: HGTP20N60B3 , HGTP20N60C3 , HGTP20N60C3R , HGTP2N120BN , HGTP2N120BND , HGTP2N120CN , HGTP2N120CND , HGTP3N60A4 , SGW10N60A , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND .

 

 
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