HGTP3N60A4D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: HGTP3N60A4D

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V

Максимальная температура перехода (Tj): 150

Корпус: TO220AB

Аналог (замена) для HGTP3N60A4D

HGTP3N60A4D Datasheet (PDF)

2.1. hgtp3n60.pdf Size:390K _harris_semi

HGTP3N60C3D, HGT1S3N60C3D, S E M I C O N D U C T O R HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB � 6A, 600V at TC = +25oC EMITTER COLLECTOR � 600V Switching SOA Capability GATE � Typical Fall Time - 130ns at TJ = +150oC COLLECTOR (FLANGE) � Short Circuit Rating � Low Conduction Loss � Hyperfast Ant

Другие IGBT... HGTP20N60B3 , HGTP20N60C3 , HGTP20N60C3R , HGTP2N120BN , HGTP2N120BND , HGTP2N120CN , HGTP2N120CND , HGTP3N60A4 , SGW10N60A , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND .