HGTP3N60C3D Todos los transistores

 

HGTP3N60C3D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTP3N60C3D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 33

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 6

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 5

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220AB

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HGTP3N60C3D Datasheet (PDF)

2.1. hgtp3n60.pdf Size:390K _harris_semi

HGTP3N60C3D
HGTP3N60C3D

HGTP3N60C3D, HGT1S3N60C3D, S E M I C O N D U C T O R HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = +25oC EMITTER COLLECTOR • 600V Switching SOA Capability GATE • Typical Fall Time - 130ns at TJ = +150oC COLLECTOR (FLANGE) • Short Circuit Rating • Low Conduction Loss

Otros transistores... HGTP2N120BND , HGTP2N120CN , HGTP2N120CND , HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , G7N60C , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND , HGTP6N40E1D , HGTP6N50E1D , HGTP7N60A4 , HGTP7N60A4D .

 

 
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