HGTP3N60C3D Specs and Replacement
Type Designator: HGTP3N60C3D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 33 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 6 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
Package: TO220AB
HGTP3N60C3D Substitution - IGBT ⓘ Cross-Reference Search
HGTP3N60C3D datasheet
hgtd3n60c3s hgtp3n60c3.pdf
HGTD3N60C3S, HGTP3N60C3 Data Sheet December 2001 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated 6A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 1... See More ⇒
Specs: HGTP2N120BND , HGTP2N120CN , HGTP2N120CND , HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , CRG15T120BNR3S , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND , HGTP6N40E1D , HGTP6N50E1D , HGTP7N60A4 , HGTP7N60A4D .
Keywords - HGTP3N60C3D transistor spec
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