HCKW60N65CH2A Todos los transistores

 

HCKW60N65CH2A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HCKW60N65CH2A
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 375 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 136 nS
   Coesⓘ - Capacitancia de salida, typ: 199 pF
   Paquete / Cubierta: TO247
 

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HCKW60N65CH2A Datasheet (PDF)

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 hckw60n65ch2a.pdf pdf_icon

HCKW60N65CH2A

HCKW60N65CH2A@CoolWatt IGBTHCKW60N65CH2A is a 650V60A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technology L

 5.1. Size:1383K  cn vgsemi
 hckw60n65bh2a.pdf pdf_icon

HCKW60N65CH2A

HCKW60N65BH2A@Trench-FS Cool-Watt IGBTHCKW60N65BH2A is a 650V60A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS techno

Otros transistores... 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , 1MBH50D-060 , HCKW40N65H2 , HCKW60N65BH2A , SGH80N60UFD , HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 , 2PG401 .

History: MMG75S120B6TC | IHW30N135R5 | MKI100-12E8 | MIXA10WB1200TED | IXGA24N60C | DIM600DDM17-A | IGZ75N65H5

 

 
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