20N60C3R - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: 20N60C3R

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 164W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.2V

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20V

Максимальный постоянный ток коллектора (Ic): 40A

Максимальная температура перехода (Tj): 150

Время нарастания: 34

Корпус: TO220AB

Аналог (замена) для 20N60C3R

20N60C3R Datasheet (PDF)

1.1. hgtg20n60c3r.pdf Size:112K _igbt_a

HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as • 600V Switching SOA Capability other high voltage switching applications. These

1.2. hgtp20n60c3r.pdf Size:112K _igbt_a

HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as • 600V Switching SOA Capability other high voltage switching applications. These

 3.1. hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Size:140K _fairchild_semi

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices � 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar � 600V Switching SOA Capability transistors. These devices have the high input impedance of � Typical Fall Time. . . . . . . . . . . . . . . . 108n

3.2. spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf Size:683K _infineon

SPP20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS� Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.19 ? � New revolutionary high voltage technology ID 20.7 A � Worldwide best RDS(on) in TO 220 PG-TO220FP PG-TO262 PG-TO220 � Ultra low gate charge � Periodic avalanche rated 3 � Extreme dv/dt rated 2 1 P-TO220-3-31 � High peak current capability � Improved transconductance � PG-TO-22

 3.3. spb20n60c3 rev.2.8.pdf Size:782K _infineon

VDS Tjmax ? � G 3 � � � � � G

3.4. spw20n60c3 rev[1].2.5 pcn.pdf Size:765K _infineon

VDS Tjmax ? � � G � � � � G-TO247

 3.5. spp20n60c3 spi20n60c3 spa20n60c3.pdf Size:1832K _infineon

SPP20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS� Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.19 ? � New revolutionary high voltage technology ID 20.7 A � Worldwide best RDS(on) in TO 220 PG-TO220FP PG-TO262 PG-TO220 � Ultra low gate charge � Periodic avalanche rated 3 � Extreme dv/dt rated 2 1 P-TO220-3-31 � High peak current capability � Improved transconductance � PG-TO-22

3.6. spi20n60c3.pdf Size:215K _inchange_semiconductor

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPI20N60C3 ·FEATURES ·With TO-262(I2PAK) package ·Low input capacitance and gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =2

3.7. spa20n60c3.pdf Size:201K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPA20N60C3 ·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25

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