BSM100GB170DN2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM100GB170DN2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1000 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.4 V @25℃
trⓘ - Tiempo de subida, typ: 200 nS
Coesⓘ - Capacitancia de salida, typ: 1300 pF
Encapsulados: MODULE
Búsqueda de reemplazo de BSM100GB170DN2 IGBT
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BSM100GB170DN2 datasheet
bsm100gb170dn2.pdf
BSM 100 GB 170 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 15 Ohm Type VCE IC Package Ordering Code BSM 100 GB 170 DN2 1700V 145A HALF-BRIDGE 2 C67070-A2703-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1700 V Collector-gate voltage VCGR RGE = 20 k 1700
bsm100gb170dlc.pdf
Technische Information / Technical Information IGBT-Module BSM 100 GB 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 100 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 200 A Periodischer Kollektor Spitzens
bsm100gb120dlc.pdf
Technische Information / technical information IGBT-Module BSM100GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro
bsm100gb120dn2.pdf
BSM 100 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GB 120 DN2 1200V 150A HALF-BRIDGE 2 C67076-A2107-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE
Otros transistores... FF150R17KE4 , BSM100GAL120DN2 , BSM100GAR120DN2 , BSM100GB120DLC , BSM100GB120DLCK , BSM100GB120DN2 , BSM100GB120DN2K , BSM100GB170DLC , FGH40N60SFD , BSM100GB60DLC , BSM100GD60DLC , BSM50GAL100D , BSM50GB100D , BSM50GB120DLC , BSM50GB120DN2 , BSM50GB170DN2 , BSM50GB60DLC .
History: MIXA20W1200MC | 6MBP50NA060-01
History: MIXA20W1200MC | 6MBP50NA060-01
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