BSM100GB170DN2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSM100GB170DN2 Datasheet (PDF)

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BSM 100 GB 170 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 15 OhmType VCE IC Package Ordering CodeBSM 100 GB 170 DN2 1700V 145A HALF-BRIDGE 2 C67070-A2703-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 VCollector-gate voltage VCGRRGE = 20 k 1700

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Technische Information / Technical InformationIGBT-ModuleBSM 100 GB 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungVCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 100 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 200 APeriodischer Kollektor Spitzens

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bsm100gb120dlc.pdf pdf_icon

Technische Information / technical informationIGBT-ModuleBSM100GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

5.2. Size:166K eupec
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BSM 100 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GB 120 DN2 1200V 150A HALF-BRIDGE 2 C67076-A2107-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE