BSM100GB170DN2 Specs and Replacement
Type Designator: BSM100GB170DN2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1000 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
tr ⓘ - Rise Time, typ: 200 nS
Coesⓘ - Output Capacitance, typ: 1300 pF
Package: MODULE BSM100GB170DN2 Substitution - IGBTⓘ Cross-Reference Search
BSM100GB170DN2 datasheet
bsm100gb170dn2.pdf
BSM 100 GB 170 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 15 Ohm Type VCE IC Package Ordering Code BSM 100 GB 170 DN2 1700V 145A HALF-BRIDGE 2 C67070-A2703-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1700 V Collector-gate voltage VCGR RGE = 20 k 1700 ... See More ⇒
bsm100gb170dlc.pdf
Technische Information / Technical Information IGBT-Module BSM 100 GB 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 100 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 200 A Periodischer Kollektor Spitzens... See More ⇒
bsm100gb120dlc.pdf
Technische Information / technical information IGBT-Module BSM100GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro... See More ⇒
bsm100gb120dn2.pdf
BSM 100 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GB 120 DN2 1200V 150A HALF-BRIDGE 2 C67076-A2107-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE... See More ⇒
Specs: FF150R17KE4, BSM100GAL120DN2, BSM100GAR120DN2, BSM100GB120DLC, BSM100GB120DLCK, BSM100GB120DN2, BSM100GB120DN2K, BSM100GB170DLC, FGH40N60SFD, BSM100GB60DLC, BSM100GD60DLC, BSM50GAL100D, BSM50GB100D, BSM50GB120DLC, BSM50GB120DN2, BSM50GB170DN2, BSM50GB60DLC
Keywords - BSM100GB170DN2 transistor spec
BSM100GB170DN2 cross reference
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