MMIX1X200N60B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMIX1X200N60B3 Datasheet (PDF)

..1. Size:233K ixys
mmix1x200n60b3.pdf pdf_icon

Preliminary Technical InformationVCES = 600VXPTTM 600V IGBT MMIX1X200N60B3IC110 = 120AGenX3TM VCE(sat) 1.7V (Electrically Isolated Tab)tfi(typ) = 110nsExtreme Light Punch ThroughCIGBT for 10-30kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VEVCGR TJ = 25C to 175C, RGE = 1M 600 VVGES Continuous 2

0.1. Size:243K ixys
mmix1x200n60b3h1.pdf pdf_icon

Preliminary Technical InformationVCES = 600VXPTTM 600V IGBT MMIX1X200N60B3H1IC110 = 72AGenX3TM w/Diode VCE(sat) 1.7V (Electrically Isolated Tab)tfi(typ) = 110nsExtreme Light Punch ThroughCIGBT for 10-30kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Conti

8.1. Size:241K ixys
mmix1x340n65b4.pdf pdf_icon

Advance Technical InformationVCES = 650VXPTTM 650V IGBT MMIX1X340N65B4IC90 = 295AGenX4TM VCE(sat) 1.7V tfi(typ) = 80nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingCGE Maximum Ratingsymbol Test ConditionsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE =

8.2. Size:299K ixys
mmix1x100n60b3h1.pdf pdf_icon

Preliminary Technical InformationXPTTM 600V VCES = 600VMMIX1X100N60B3H1GenX3TM w/ DiodeIC90 = 60AVCE(sat) 1.80V(Electrically Isolated Tab)CMedium-Speed Low-Vsat PTIGBT for 10-30 kHz SwitchingGSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V Isolated TabVGES Continuous 20 V

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .